| PART |
Description |
Maker |
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| GM194A |
N P N S I L I C O N P L AN A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| GL195A |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| AGR21010E |
N-Channel E-Mode Lateral MOSFET
|
Agere Systems
|
| AFT09H310-03S |
N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| AFT09S200W02S AFT09S200W02SR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| ATC600B121BT250XT ATC600B200BT250XT ATC600B270BT25 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| MRF9200LSR3 MRF9200LR3 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
|
